The stability of aluminium oxide monolayer and its interface with two-dimensional materials | Scientific Reports
Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator | Scientific Reports
IETS spectrum and trap energy level within the Al2O3 band gap. (a)... | Download Scientific Diagram
Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16
Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri
Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy
Interfacial thermal stability and band alignment of Al2O3/HfO2/Al2O3/Si gate stacks grown by atomic layer deposition - ScienceDirect
![PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/61c9ff559ecfa5e01e3660a2ec9ac70b1cebe4b1/4-TableI-1.png "PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar")
PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor: Applied Physics Letters: Vol 107, No 14
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
Figure 2 from Photochemistry of the α-Al2O3-PETN Interface | Semantic Scholar
The origin of negative charging in amorphous Al2O3 films: the role of native defects
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
Band Offset and Electron Affinity of Monolayer MoSe2 by Internal Photoemission
Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques: Journal of Applied Physics: Vol 119, No 16
Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy
a) Schematic band gap diagram of the n -GaN /Al2O3/ p -ZnO structure.... | Download Scientific Diagram
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying
CoMoW/Al2O3-MgO-Li2O Catalytic formulations for DBT hydrodesulphurization
1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot
arXiv:1703.01778v1 [cond-mat.mtrl-sci] 6 Mar 2017
